Transparent,fluorescent, and mechanical enhanced elastomeric composites formed with poly (styrene‐butadiene‐styrene) and SiO2‐hybridized CdTe quantum dots

Transparent poly(styrene‐butadiene‐styrene) (SBS)‐quantum dots (QDs) composites (SBS/CdTe QDs) that simultaneously possess strong photoluminescence (PL) and enhanced mechanical properties are presented for the first time based on the facile blending of SiO₂‐hybridized CdTe QDs with SBS. UV–vis spectrum and fluorescence measurement show that SBS/CdTe QDs composites exhibit good optical properties. The results of transmission electron microscopy show good dispersion of CdTe QDs in the SBS matrix. The results of dynamic mechanical thermal analysis indicate that the micro‐phase separated structure of the SBS is exist in the composites, and the presence of CdTe QDs can lead to an decrease of glass transition temperatures of polybutadiene (PB) and polystyrene(PS) domains. In addition, mechanical tests reveal that the addition of CdTe QDs is a useful approach to improve the mechanical properties of SBS. Meanwhile, the fluorescent photographs taken under ultraviolet light prove that SBS/CdTe QDs composites possess strong PL. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011.     

改造气液分离设备提高分离效率

针对目前气液分离设备普遍存在的弊端,结合气液流动的特点,改进雾沫分离器的结构形式,气体输送管道水平段增设盲肠分离器、气液分离器等,提高气液分离效率.     

铜基体镀金层大气变色机理分析及对策

本文对电连接器镀金接触体可能经常发生的表面红(黑)斑点现象进行了描述,结合现代的微观分析手段,从化学热力学和动力学两个层面进行了分析,为业界提供解决该类问题的思路及一般方法,减少制造业不必要的损失,希冀对社会可持续发展有所贡献.     

影响脱硫石膏旋流器性能的关键指标

石膏旋流器在湿法脱硫的脱水环节起着重要的作用,其性能还会影响到真空皮带脱水机的正常工作。在对石膏旋流器进行研究时,既要注重能耗、分离效率、分离粒度等指标,也不能忽略底流固体质量分数、分级精度上的要求。分析了影响石膏旋流器主要指标的因素,强调了固体质量分数和分级精度的重要性。根据实验数据,给出了较为合理的溢流、底流口径比及入口压力的取值范围,可为石膏旋流器的进一步优化提供参考。     

45Si2CrB合金钢表面裂纹产生原因分析

用金相检测、扫描电镜观察及能谱分析等手段,对45Si2CrB成品及盘条试样表面裂纹进行分析,发现裂纹周围存在氧化脱碳、氧化圆点、夹杂物聚集及晶粒粗大现象。结果表明,试样表面裂纹为高温裂纹,是由连铸坯原始缺陷经过加热及后期轧制演变而成的。     

High Precision,Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models

We report a novel hybrid charge sensor realized by the deposition of phospholipid monolayers on highly doped n‐GaN electrodes. To detect the binding of recombinant proteins with histidine‐tags, lipid vesicles containing chelator lipids were deposited on GaN electrodes pre‐coated with octadecyltrimethoxysilane monolayers. Owing to its optical transparency, GaN allows the confirmation of the fluidity of supported membranes by fluorescence recovery after photo‐bleaching (FRAP). The electrolyte‐(organic) insulator‐semiconductor (EIS) setup enables one to transduce variations in the surface charge density ΔQ into a change in the interface capacitance ΔC _p and, thus, the flat‐band potential ΔU _FB. The obtained results demonstrate that the membrane‐based charge sensor can reach a high sensitivity to detect reversible changes in the surface charge density on the membranes by the formation of chelator complexes, docking of eGFP with histidine tags, and cancellation by EDTA. The achievable resolution of ΔQ ≥ 0.1 μC/cm² is better than that obtained for membrane‐functionalized p‐GaAs, 0.9 μC/cm², and for ITO coated with a polymer supported lipid monolayer, 2.2 μC/cm². Moreover, we examined the potential application of optically active InGaN/GaN quantum dot structures, for the detection of changes in the surface potential from the photoluminescence signals measured at room temperature.     

Low‐Noise Multispectral Photodetectors Made from All Solution‐Processed Inorganic Semiconductors

Infrared, visible, and multispectral photodetectors are important components for sensing, security and electronics applications. Current fabrication of these devices is based on inorganic materials grown by epitaxial techniques which are not compatible with low‐cost large‐scale processing. Here, air‐stable multispectral solution‐processed inorganic double heterostructure photodetectors, using PbS quantum dots (QDs) as the photoactive layer, colloidal ZnO nanoparticles as the electron transport/hole blocking layer (ETL/HBL), and solution‐derived NiO as the hole transport/electron blocking layer (HTL/EBL) are reported. The resulting device has low dark current density of 20 nA cm^‐2 with a noise equivalent power (NEP) on the order of tens of picowatts across the detection spectra and a specific detectivity (D*) value of 1.2 × 10¹² cm Hz^1/2 W^‐1. These parameters are comparable to commercially available Si, Ge, and InGaAs photodetectors. The devices have a linear dynamic range (LDR) over 65 dB and a bandwidth over 35 kHz, which are sufficient for imaging applications. Finally, these solution‐processed inorganic devices have a long storage lifetime in air, even without encapsulation.     

In‐Situ Carbon Doping of TiO2 Nanotubes Via Anodization in Graphene Oxide Quantum Dot Containing Electrolyte and Carburization to TiOxCy Nanotubes

Anodic production of self‐organized titania nanotubes (TNTs) in an electrolyte enriched with graphene oxide quantum dots (GOQDs) is reported. The TNT‐GOQD composites grown under these conditions show in‐situ carbon doping, leading to the formation of anatase TiO₂ domains and to the reduction to substoichiometric oxide (TiO_x) and TiC. Surface science and electrochemical techniques are used in synergy to reveal that graphitic carbon is incorporated into TiO₂ upon anodic nanotube growth promoting the formation of oxygen vacancies and thus TiO₂ reduction. Upon annealing in ultrahigh vacuum, titanium oxycarbide (TiO_xC_y) is formed at temperatures ≥400 °C, where the material changes from a semiconductor to a semimetal. At the solid/liquid interface, the apparent electron donor density increases from as‐grown TNTs to as‐grown TNT‐GOQD composites due to the carbon doping, and the conductivity increases further with annealing temperature due to the increasing concentration of coordinatively unsaturated C atoms, crystallinity, and TiO₂ reduction. The materials synthesized and characterized in this study find application in different areas ranging from visible light photocatalysis and photo‐electrochemistry to use as Li‐ion battery anodes and electrocatalyst supports, because it is possible to gradually tune the density of states below the Fermi level, which can be referred to as band‐gap engineering.